IXTA6N50D2 IXTP6N50D2
IXTH6N50D2
2.6
2.2
Fig. 7. Normalized R DS(on) vs. Junction Temperature
V GS = 0V
I D = 3A
4.0
3.5
Fig. 8. R DS(on) Normalized to I D = 3A Value
vs. Drain Current
V GS = 0V
5V - - - -
3.0
1.8
2.5
1.4
1.0
2.0
1.5
1.0
T J = 125oC
T J = 25oC
0.6
0.5
0.2
0.0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
20
T J - Degrees Centigrade
Fig. 9. Input Admittance
12
I D - Amperes
Fig. 10. Transconductance
18
16
V DS = 30V
10
V DS = 30V
14
12
10
8
T J = 125oC
25oC
8
6
T J = - 40oC
25oC
125oC
6
4
2
0
- 40oC
4
2
0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
0
2
4
6
8
10
12
14
16
18
20
1.3
V GS - Volts
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
18
I D - Amperes
Fig. 12. Forward Voltage Drop of
Intrinsic Diode
16
V GS = -10V
1.2
V GS(off) @ V DS = 25V
14
12
1.1
1.0
0.9
0.8
BV DSX @ V GS = - 5V
10
8
6
4
2
0
T J = 125oC
T J = 25oC
-50
-25
0
25
50
75
100
125
150
0.3
0.4
0.5
0.6
0.7
0.8
0.9
T J - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
V SD - Volts
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相关代理商/技术参数
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